1.5 0.1 4.5 0.1 2.6 0.15 2.1 0.2 1.3 0.2 0.203max 0.2 0.05 5.1 0.2 features low cost low leakage low forward voltage drop high current capability mechanical data c a s e : j e d ec d o - 21 4 a c , m o l d e d p l a s t i c t e r m i n a l s: s olde r a b l e p e r mil- std-202,method 208 p o l a r i t y : c o l o r b a nd de n o t es c a t h ode w e i g h t : 0 . 0 0 3 o un c es , 0 . 0 93 g r a m s m ou n t i ng pos i t i o n : a ny ratings at 25 ambient temperature unless otherwise specified. s i n g l e p h a s e , half w a v e , 60 h z , r e s i s t ive or indu c t i v e load. for c apa c i t i v e load , d e r a t e by 2 0 % . es2aa es2ba es 2 c a es 2 d a es 2 g a es2ha es2ja maximum recurrent peak reverse voltage v r r m v maximum rms voltage v r m s maximum dc blocking voltage v dc v maximum average forward rectified current @ t a = 110 peak forward surge current 8.3ms single half-sine-wave superimposed on rated load @t j =125 m a x i m um i n s t an t a ne o us f or w a r d v o l t a ge a t 2 . 0 a v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a = 1 25 typical reverse recovery time (note1) t rr ns typical junction capacitance (note2) c j pf t y p i c al t her m al r e s i s t an c e r ja /w operating junction temperature range t j storage temperature range t stg 0 . 9 5 1.25 1.7 d o - 21 4 a c ( s m a ) u n i t s - 55 ---- + 150 50 100 150 200 400 500 600 a 5 0 i fsm i r note: 1. measured with i f =0.5a, i r =1a, i rr =0.25a. a e s 2 a a --- e s 2 j a a 10 easily cleaned with alcohol,isopropanol and similar solvents i f ( a v ) 2 . 0 s u r f a ce m o unt r e c t i f i e r s the plastic material carries u/l recognition 94v-0 50 100 150 200 400 500 600 2 . m e a s u r e d at 1 . 0 m h z and a p p l i ed r e v e r s e v o l t a ge of 4 . 0v d c . 18 50 35 0 v o l t a g e r an g e: 50 --- 6 00 v c u rr e nt: 2 . 0 a - 55 ---- + 150 35 70 105 140 280 350 420 maximum ratings and electrical characteristics 3. thermal resistance f rom junction to ambient and junction to lead p.c.b.mounted on 0.27''x0.27''(7.0x7.0mm dimensions in millimeters v 35 www.diode.kr diode semiconductor korea
.6 .4 .8 1.0 1.2 1.4 1.6 1.8 0.01 0.1 1 10 100 tj=25 c pulse width=300 s 1% duty cycle o es2aa ~ es2da ES2GA es2ha ~ es2ja t j =25 1 2 4 6 10 20 40 60 100 200 0.1 0.2 0.4 1 2 4 10 40 100 20 amperes amperes amperes junction capacitance,pf notes:1.rise time = 7ns max.input impedance = 1m .22pf. jjjjj 2.rise time =10ns max.source impedance=50 . i n s t a n t a n e o u s f o r w a r d v o l t a g e , v o l t s instantaneous forward curren t es 2 a a --- es 2 j a fig.1 -- test circuit diagram and reverse recovery time characteristic average forward current s e t t i m e ba s e f o r 1 0 / 15 n s / c m fig.2 -- typical forward characteristic fig.3 -- forward derating curve z fig.4 -- typical junction capacitance fig.5 -- peak forward surge current a m b i e n t t e m p e r a t ur e , peak forward surge curren t number of cycles at 60hz reverse voltage,volts pulse generator (note2) d.u.t. 1 nonin- ductive 50 n 1. 10 n1. oscilloscope (note 1) (+) 25vdc (approx) (-) - 1 . 0 a - 0 . 25a 0 + 0 . 5 a t rr 1cm 0 40 50 110100 30 5 8.3ms single half sine-wave 50 10 20 .5 1 1.5 2 2.5 0 25 50 75 100 125 150 single phase half wave 60h z resistive or inductive load 0 175 www.diode.kr diode semiconductor korea
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